Type Designator: FQD7N20L
Type of Transistor: MOSFET
Email to friends Share on Facebook - opens in a new window or tab Share on Twitter - opens in a new window or tab Share on Pinterest - opens in a new window or tab. Display Drivers 16 MOSFET Drivers 6,794 Other Interface ICs 36 Peripheral Drivers 232. 15,786 hits Apply. 5 µA 24 15 µA 9 50 µA 11 100. HALF BRIDGE BASED MOSFET DRIVER.
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 45 W
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Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO252DPAK
FQD7N20L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD7N20L Datasheet (PDF)
0.1. fqd7n20l fqu7n20l.pdf Size:569K _fairchild_semi
December 2000TMQFETQFETQFETQFETFQD7N20L / FQU7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced
0.2. fqd7n20ltf fqd7n20ltm.pdf Size:622K _fairchild_semi
October 2008QFETFQD7N20L / FQU7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology is especi
7.1. fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf Size:802K _fairchild_semi
October 2008QFETFQD7N20 / FQU7N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 200V, RDS(on) = 0.69 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been especia
Datasheet: FQD5P10, FQD5P20, FQD6N25, FQD6N40C, HUFA76419D_F085, FQD6N50C, FQD7N10L, HUFA75645S3S, 2SK3562, IRFS450B, FQD7N30, FQD7P06, FQD7P20, FQD8P10, FQD8P10TM_F085, FQD9N25, FQD9N25TM_F085.
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MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
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STP40NF03L Summary of contents
Page 1
... Table 1. Device summary Order codes STF40NF03L STP40NF03L February 2010 STripFET™ Power MOSFET max Figure 1. Marking Package F40NF03L TO-220FP P40NF03L TO-220 Doc ID 6794 Rev 8 STF40NF03L STP40NF03L TO-220 TO-220FP Internal schematic diagram Packaging Tube Tube 1/14 www.st.com 14 ...
Page 2
... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L ...
Page 3
... STF40NF03L, STP40NF03L 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T tot Derating factor Insulation withstand voltage (RMS) from all three leads to external heat sink ...
Page 4
... 4 Parameter Test conditions MHz 4.7 Ω Figure 16) (see 4 Figure 17) (see Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L Min. Typ. Max ±100 = 250 µA 1 1.7 2 0.018 0.022 = 20 A 0.028 0.035 D Min. Typ. Max 770 - 255 4 10 4.5 Unit V 1 µA 10 µ Ω Ω ...
Page 5
... STF40NF03L, STP40NF03L Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...
Page 6
... D (A) 100 10 1 Tj=175°C Tc=25°C Sinlge 0.1 pulse 0.01 0.1 1 Figure 6. Output characteristics 6/14 Figure 3. Figure 5. AM03797v1 100µs 1ms 10ms 10 V (V) DS Figure 7. Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L Thermal impedance for TO-220 Thermal impedance for TO-220FP Transfer characteristics ...
Page 7
... STF40NF03L, STP40NF03L Figure 8. Transconductance Figure 10. Gate charge vs. gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs. temperature Figure 9. Static drain-source on resistance Figure 13. Normalized on resistance vs. temperature Doc ID 6794 Rev 8 Electrical characteristics 7/14 ...
Page 8
... Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/14 Figure 15. Normalized B Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L vs. temperature VDSS ...
Page 9
6794 Mosfet Gate
... STF40NF03L, STP40NF03L 3 Test circuits Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive waveform Figure 17. Gate charge test circuit Figure 19. Unclamped inductive load test circuit Figure 21. Switching time waveform ...
Page 10
... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/14 Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L ® ...
Page 11
... STF40NF03L, STP40NF03L Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2.95 ...
Page 12
... Package mechanical data Dim 12/14 TO-220FP mechanical data Dia Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L 7012510_Rev_J G ...
Page 13
... STF40NF03L, STP40NF03L 5 Revision history Table 7. Document revision history Date 09-Sep-2004 21-Jun-2005 16-Aug-2006 21-Feb-2007 20-Nov-2008 14-Apr-2009 03-Feb-2010 22-Feb-2010 Revision 1 Preliminary version 2 Complete version with curves 3 New template, no content change 4 Typo mistake on page 1 Figure 9: Static drain-source on resistance 5 6 The device in TO-220FP has been added ...
Page 14
... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L ...
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